WITH EFFECT FROM THE ACADEMIC YEAR 2012 - 2013

EE 303

POWER ELECTRONICS

(Common to IE & EEE)

Instruction                                             4              Periods per week

Duration of University Examination     3              Hours

University Examination                         75            Marks

Sessional                                                25            Marks

UNIT-I

Power Semiconductor Diodes and Transistors: Types of power diodes-General purpose diodes -Fast recovery diodes -Their characteristics and applications. Bipolar Junction transistors, Power MOSFETs P-Channel, N- Channel. IGBTs -Basic structure and working, Steady state and switching characteristics-Comparison of BJT, MOSFET and IGBT -Their applications. ISCRs-Static and dynamic characteristics,Two transistor analogy.

UNIT-II

Turn on and turn off mechanism of BJT , Power MOSFET, IGBTs .SCR trigger circuits-R, RC and UJT triggering circuits. Triggering circuits for Single phase bridge rectifier and Choppers. Driver Circuits for MOSFET, IGBT and BJT. The various commutation methods of SCRs. Protection of SCRs . GTO's - Basic structure, principle of operation, characterisics and applications.

UNIT-III

Principles of controlled rectification -Study of Single phase and three-phase half controlled and full controlled bridge rectifiers with R, RL, RLE loads. Effect of source inductances. Dual converters- circulating current mode and circulating current free mode-control strategies.

UNIT-IV

Classification of Choppers A, B, C, D and E, Switching mode regulators-Study of Buck, Boost and Buck-Boost regulators, Cuk regulators . Principle of operation of Single phase bridge type Cyclo converters and their applications. Single phase AC Voltage Controllers with R, and RL loads.

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